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inchange semiconductor isc product specification isc silicon pnp power transistors 2SB551 description low collector saturation voltage- : v ce( sat ) = -1.2v(typ.)@i c = -2a high power dissipation- : p c = 25w(max)@t c =55 applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -4 v i c collector current-continuous -3 a p c collector power dissipation @t c = 25 25 w t j junction temperature 150 t stg storage temperature -45~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors 2SB551 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma; r be = -50 v v (br)cbo collector-base breakdown voltage i c = -5ma; i e = 0 -50 v v (br)ebo emitter-base breakdown voltage i e = -5ma; i c = 0 -4 v v ce (sat) collector-emitter saturation voltage i c = -2a; i b = -0.2a b 1.2 v v be (on) base-emitter on voltage i c = -1a; v ce = -4v 1.5 v i cbo collector cutoff current v cb = -20v; i e = 0 -0.1 ma h fe-1 dc current gain i c = -1a; v ce = -4v 35 200 h fe-2 dc current gain i c = -0.1a; v ce = -4v 35 f t current-gain?bandwidth product i c = -0.5a; v ce = -4v 15 mhz ? h fe- 1 classifications a b c 35-70 60-120 100-200 isc website www.iscsemi.cn |
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